摘要
Hafnium oxide films are deposited on Si(100)substrates by means of rf magnetron sputtering.The interfacial structure is studied using high-resolution transmission electron microscopy(HRTEM)and x-ray photoelectron spectroscopy(XPS),and the electrical properties of the Au/HfO_(2)/Si stack are analyzed by frequency−dependent capacitance-voltage(C–V–f)measurements.The amorphous interfacial layer between HfO_(2) and the Si substrate is observed by the HRTEM method.From the results of XPS,the interfacial layer comprises hafnium silicate and silicon oxide.For C–V–f measurements,the C–V plots show a peak at a low frequency and the change in frequency has effects on the intensity of the peak.As expected,rapid thermal annealing can passivate the interface states of the HfO_(2)/Si stack.
作者
TAN Ting-Ting
LIU Zheng-Tang
LI Yan-Yan
谭婷婷;刘正堂;李艳艳(State Key Laboratory of Solidification Processing,College of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an 710072)
基金
by the Northwestern Polytechnical University(NPU)Foundation for Fundamental Research under Grant No JC201111
the Research Fund of the State Key Laboratory of Solidification Processing(NWPU)under Grant No 58-TZ-2011,and the 111 Project under Grant No B08040.
