摘要
Room-temperature Tm:Ho:GdVO4 microchip laser operated around 2μm is demonstrated for the first time to our knowledge.At a heat sink temperature of 283K,maximum output power of 29.7m W is obtained by using a 0.25-mm-long crystal at an absorbed pump power of 912mW,corresponding to a slope efficiency of 5.0%.At the temperature to 283K,a single-longitudinal-mode laser as much as 8mW at 2048.5 nm is achieved.The M^(2)factor is measured to be 1.4.
