摘要
We report the identification of a donor band and the correlation between n-type conductivity and the green emission in ZnO nanowires.Temperature-dependent photoluminescence is used to investigate nominally undoped ZnO nanowires with high n-type conductivity.Within the whole temperature range,a dominant free-to-bound transition with a donor band of about 150meV below the conduction band minimum is observed.The nanowires show very strong green emission,which is quenched with activation energy of about 220 meV.The correlation between the high n-type conductivity and the strong green emission is discussed in detail,and we suggest that they may have different origins.
作者
TANG Hai-Ping
HE Hai-Ping
LIU Chao
KWON Bong-Jun
YE Zhi-Zhen
LEE Soonil
PARK Ji-Yong
唐海平;何海平;刘超;KWON Bong-Jun;叶志镇;LEE Soonil;PARK Ji-Yong(Division of Energy Systems Research,Ajou University,Suwon,443-749,Korea;Baoji University of Arts and Sciences,Baoji 721007;State Key Laboratory of Silicon Materials,Department of Materials Science and Engineering,Zhejiang University,Hangzhou 310027)
基金
Supported by the Research Program in Baoji University of Arts and Sciences under Grant No ZK072
the Natural Science Foundation of China under Grant No 60806003
the Doctoral Fund of Ministry of Education of China under Grant No 20070335010
the Priority Research Centers Program through the National Research Foundation of Korea(NRF)Funded by the Ministry of Education,Science and Technology(2009-0094049,313-2007-2-C00266)
Excellence Research Program in Ajou University.
