摘要
Amorphous hydrogenated and crystalline silicon thin films were prepared by hot-filament chemical vapor deposition.A structural transformation from amorphous phase to crystalline phase by increasing the filament temperature Tfil from 1600℃ to 1650℃ was observed.This phenomenon may result from the associated abundance of H radicals participating in the growth of the Silms.A probability distribution model of the H radical is proposed to elucidate this phenomenon.According to this model,the phase transition is due to a distinct difference in the probability distribution of the H radicals,which seems to be dependent upon Tfil.
基金
Supported by the National Natural Science Foundation of China under Grant No 50802037
the Natural Science Foundation of Gansu Province under Grant No 0710RJZA041.
