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A Novel Model of the H Radical in Hot-Filament Chemical Vapor Deposition

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摘要 Amorphous hydrogenated and crystalline silicon thin films were prepared by hot-filament chemical vapor deposition.A structural transformation from amorphous phase to crystalline phase by increasing the filament temperature Tfil from 1600℃ to 1650℃ was observed.This phenomenon may result from the associated abundance of H radicals participating in the growth of the Silms.A probability distribution model of the H radical is proposed to elucidate this phenomenon.According to this model,the phase transition is due to a distinct difference in the probability distribution of the H radicals,which seems to be dependent upon Tfil.
作者 GUO Xiao-Song BAO Zhong ZHANG Shan-Shan XIE Er-Qing 郭小松;包忠;章山山;谢二庆(Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Physical Science and Technology School,Lanzhou University,Lanzhou 730000)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2011年第2期216-219,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 50802037 the Natural Science Foundation of Gansu Province under Grant No 0710RJZA041.
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