摘要
An up to date most detailed information of H(Hole)as well as E(Electron)traps produced by low dose(10^(11)cm^(-2))boron and phosphorus implantation in n-Si and their thermal annealing behaviours are reported.For the first time,two hole traps H2(0.62),H3(0.49)of huge concentrations were detected in B^(+)implanted n-Si.They are tentatively assigned as boron related acceptors.H2(0.51)of huge concentration were detected in P^(+)implanted n-Si.Other three hole traps H1(0.63),H4(0.37)and H5(0.15)were detected in both B^(+)and P^(+)implanted n-Si;they are thus unrelated to boron.E traps are also reported;some of these E traps are consistent with previous reports and some are new.
