摘要
Nb_(3)Sn-Pb Josephson tunnel juntions were fabricated using Nb_(3)Sn thin films formed by a simple ooevaporation technique,while the tunnel barriers were formed by RF oxidation in an Ar and O_(2) gas mixture.The I-V characteristics were measured at 4.2K,in which a sharp current rise at the gap voltage of 4.35mV was observed.The ratio of the subgap resistance to the normal one is as high as 6.The NbgSn-Pb tunnel junction prepared are of good quality.
作者
MENG Xiaofan
孟小凡(Department of Physics,Peking University,Beijing)
