摘要
A theoretical investigation of HSiz/Si(lll)interfaces using empirical tight binding method and Slab Model is presented.The positions of Fermi level Ef for various types of interfaces has been compared.The heights of E_(f)for type-Ⅰ(a)and type-Ⅱ'(a)or for type-Ⅰ(b)and type-Ⅱ(b)are the sameJ but there exists a difference of O.leV between type-Ⅰ(a)and-Ⅰ(b)as well as for type-Ⅱ(a)and-Ⅱ(b).The local densities of states of some typical layers in the slab have also been studied.
基金
supported by the Science Fund of the Chinese Academy of Sciences.
