摘要
Investigations on the nature and states of the defeats in single crystal wafers treated with double-gettering technique have been carried out by means of optical microscopy,electron microscopy,electron miaroanalysis and spread resistance.Phosphorus profile in these wafers was measured.And the effect of phosphorus on defects and resistivity was determined.
作者
麦振洪
戴道扬
周志仁
叶以正
叶水驰
MAI Zhenhong;DAI Daoyang;ZHOU Shiren;YE Yizheng;YE Shuichi(Institute of Physics,Academia Sinica,Beijing;Harbin Institute of Technology,Harbin)
