THE INFLUENCE OF O_(2) ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS_(2)(0001)

UPS,XPS,AES and LEED have been applied to the study on the scmrples prepared by low energy N+(0.5KeV)sputtering of the clean cleavaged surface of 2H-MoS_(2)(0001).A new"shoulder"of a band tail above the top of the d_(z)2 band shows that the surface is chemically active to O_(2) at room temperature,The causes for the chemical activeness have been analyzed.