摘要
In this paper reflectance(R)and thermoreflectance(TR)spectra in heavily doped silicon concerning both interband and intraband transitions are reported and discussed.The heavily doped sample shows a red-shift and lifetime broadening in the two singularrities E_(1)(~3.4eV)and E_(2)(~4.5eV).The values of the scattering timeτextracted from the reflectivity fit are obtained and compared with those obtained from Hall mobility measurements.
