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PHOTO-INDUCED REVERSIBLE CHANGE OF URBACH EDGE IN HYDROGENATED AMORPHOUS SILICON

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摘要 Photoconductivity spectra temperature dependence combining with transmission measurements have been formed on hydrogenated amorphous silicon.After exposure by AM1 light a reversible increase of 6%of the Urbach parameter E0(T,X)has been observed.This is a direct evidence for the fact that photo-induced changes in a-Si:H create not only metastable defects but also affect the topological disorder.
作者 韩大星 邱昌华 吴文豪 HAN Daxing;QIU Changhua;WU Wenhao(Institute of Physlcs,Academia Sinica,Beijing)
机构地区 Institute of Physlcs
出处 《Chinese Physics Letters》 SCIE CAS 1986年第7期297-300,共4页 中国物理快报(英文版)
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