摘要
We extend previous theoretical work to predict the derivatives with respect to the<100>uniaxial stress of the substitutional deep point defect energy levels in Gap and GaAs which,for a defect at a specific site producing a level of particular symmetry,can be evaluated as a function of their energy levels in the band gap.
作者
REN Shangyuan
MAO Deqiang
LI Mingfu
任尚元;茅徳强;李名复(Department of Physics,University of Science and Technology of China,Hefei;Graduate School,University of Science and Technology of China,Beijing)
基金
This work was supported by the Science Fund of the Chinese Academy of Sciences.
