摘要
The applications of double-gettering technique(DGT)for silicon single crystal indicate its strong gettering effectiveness.By using E-center model,the minimum concentration of phosphorus,gettering process and the continuous gettering ability were investigated.It was pointed out that the gettering functions of phosphorus and dislocation loops result in extremely strong gettering effectiveness of DGT.
基金
supported by the Science Fund of Chinese Academy of Sciences。
