Fabrication of a ZnO:Al/Amorphous-FeSi2 Heterojunction at Room Temperature

A prototype ZnO:Al/amorphous-FeSi2 heterojunction was successfully prepared on a glass substrate by magnetron sputtering at room temperature.The structural and electrical properties of as−deposited FeSi2 thin films were investigated using x−ray diffraction,Raman scattering,resistivity,and carrier lifetime measurement.The FeSi2 thin film showed an amorphous phase with resistivity of 9.685Ω⋅cm and carrier lifetime of 9.5µs.The prototype ZnO:Al/amorphous−FeSi2 heterojunction exhibited a rectifying property of the diode from the dark current−voltage characteristic.This propert was evaluated using the shunt resistance and diode ideal factor.The experimental results suggest that the amorphous-FeSi2 thin film has promising applications in heterojunction devices with low thermal budget and low product cost.