摘要
Homo-epitaxial layers are successfully grown on Si-face 4°off−axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system.The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature.Schottky diodes fabricated on the epilayer present a typical I–V characteristic.This is the first report of Schottky diodes fabricated on 4°off-axis 4H-SiC substrates made in China.
作者
李哲洋
韩平
李赟
倪伟江
鲍慧强
李宇柱
LI Zhe-Yang;HAN Ping;LI Yun;NI Wei-Jiang;BAO Hui-Qiang;LI Yu-Zhu(Jiangsu Provincial Key Lab of Advance Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093;National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016;TanKeBlue Semiconductor CO.,Ltd.,Beijing 100190)
