摘要
Nanostructured carbon thin films on Si tips were prepared by hot filament chemical vapour deposition at different substrate temperatures.The Si tips and films were obtained under various deposition conditions in the same reaction chamber.It was found that the field emission properties from graphite-like nanostructured carbon on Si tips were greatly improved as compared with those of nanodiamond films on Si tips.A turn-on field of 1.2 V·cm^(-1) was observed for high sp^(2) content thin films on Si tips.The analysis showed that the field emission enhancement effect was caused by the tip geometry,tunnel effect and sp^(2) content in the films.However,the geometrical enhancement was greater than that of the tunnel and sp^(2) content effects.
作者
王万录
廖克俊
胡成果
方亮
WANG Wan-Lu;LIAO Ke-Jun;HU Cheng-Guo;FANG Liang(Department of Applied Physics,Chongqing University,Chongqing 400044)
基金
Supported by the National Natural Science Foundation of China under Grant No.19904016.