摘要
A functional field effect transistor with self-organized In_(0.15)Ga_(0.85)As/GaAs quantum wires(QWRs)as a channel was achieved by molecular beam epitaxy on a(553)B GaAs substrate.Both the three-dimensional image of atom force microscopy and the polarization of the photoluminance peaks reveal that the channel of the device is a self-organized QWR structure.The device with a gate-length of 2μm and a source-drain spacing of 5μm performed a good enhancement-mode characteristic and a maximum transconductance of 65 mS/mm was obtained at the gate voltage of 1.0 V by the geometric gate-width at room temperature.The saturated drain current is as high as 5.6 mA.The device exhibited a much larger current capacity due to the high density of the self-organized QWRs in its channel layer.In addition,the effective gate width was discussed in comparison with the geometric gate width of the device,from which a larger maximum transconductance of 130 mS/mm could be estimated.
作者
李献杰
闫发旺
张文俊
张荣桂
刘伟吉
敖金平
曾庆明
刘式墉
梁春广
LI Xian-Jie;YAN Fa-Wang;ZHANG Wen-Jun;ZHANG Rong-Gui;LIU Wei-Ji;AO Jin-Ping;ZENG Qing-Ming;LIU Shi-Yong;LIANG Chun-Guang(Hebei Semiconductor Research Institute,Shijiazhuang 050051;Department of Electronic Engineering,Jilin University,Changchun 130023;Department of Electrical and Electronic Engineering,Tokushima University,Tokushima 770-8506,Japan)