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STUDIES ON SEMICONDUCTOR SURFACE PARAMETER BY USE OF SAW TECHNIQUE

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摘要 Using the concepts of continuity of interface impedance,the changes of both the velocity and attenuation of surface acoustic wave(SAW)caused by acoustoelectric interaction are considered layer by layer under different semiconductor surface conditions for the piezoelectric-Lnsulator-semiconductor(PIS)structures.Surface densities of states and fixed charge densities are evaluated by computer fitting and the results agree well with those obtained by other methods.
作者 WU Wen-qiu QIN Xi 吴文虬;秦希(Acoustics Institute of Nanjing University,Nanjing)
出处 《Chinese Physics Letters》 SCIE CAS 1985年第11期485-488,共3页 中国物理快报(英文版)
关键词 SAW SURFACE LAYER
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