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STOPPING POWER OF PROTON IN MONOCRYSTALLINE,POLYCRYSTALLINE AND AMORPHOUS SILICON

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摘要 The allotropic effect on the electronic topping power of protons in solids was systematically determined by the nuclear resonance reaction ^(27)Al(p,γ)^(28)Si at E_(p)=774 and 992ke V in an silicon on sapphire(SOS)sample of epitaxial Si on sapphire.Details of the experimental technique are described.The experimental error is less than 3%.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 1990年第5期226-229,共4页 中国物理快报(英文版)
基金 Project supported by Foundation of Analysis and Testing,Zhong Guan Cun Region,Beijing.
关键词 SOLIDS ERROR CRYSTAL
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