摘要
Different diffraction lattice planes were used to investigate the quality profiles of molecular beam epitaxy epi-layer GaAs films on Si substrate by X-ray double crystal diffraction method.As the X-ray incident angle increasing,the full width of half maximum(FWHM)also increases,that is,the quality getting worse in deeper layer.Therefore a clear figure of the degree of perfectness along the depth can be shown.The sample with strain surerlattice buffer layer has better quality than that without,especially in the surface lamella.
