摘要
The hydrogenated amorphous silicon(a-Si:H)/silicon carbide(a-SiCx:H)quantum well(QW)and superlattice structures were fabricated by glow discharge deposition.Wavelength differential absorption spectroscopy has been applied to study the subband transition in a-Si:H/a-SiC_(x):H Q W,and derivative spectra change clearly from a linear to a step-like form when a-Si:H well-layer thickness has decreased below 40Å.These results indicate that three-dimensional parabolic band transition is turned into subband transition in the a-Si:H QW.
基金
Supported by the National Natural Science Foundation of China.
