REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING

4.2MeV ^(7)Li channeling technique,laser Raman scattering spectrometry,and TEM have been utilized to study the regrowth of MBE-GaAs films of〜μm thick on Si substrates by Si^(+) implantation(0.6-2.6MeV)and subsequent rapid thermal annealing.The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.