摘要
The growth striation,the resistant homogeneity,and the oxygen concentration of silicon single crystal grown by both Transverse Magnetic Czochralski(MCZ)and Czochralski growth methods(CZ)were investigated.The oxygen concentration in MCZ silicon is more uniform and controllable.It is concluded that the Magnetic Czochralski method is an effective method to improve the quality of silicon single crystal.
基金
Project supported by the Natural Science Foundation of China。
