摘要
Deep level defects in undoped semi-insulating GaAs were investigated by photo-luminescence technique at room temperature.The 0.69eV band is associated with the main mid-gap level EL2,and the 0.76eV band is suggested to be caused by some native point defects related to excess As,such as As anti-site defect.Two-dimensional and pseudo three-dimensional plots of the EL2 related band have been observed for as grown and annealed wafers.
