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Transmission Electron Microscopy Investigations of Misfit Dislocation Interactions in GaAs/InGaAs Superlattices on GaAs (001) Substrates

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摘要 The complex configurations and interactions of misfit dislocations in strained GaAs/InGaAs superlattices on GaAs(001)substrates have been studied by transmission electron microscopy under the two-beam or weak beam conditions.The observed interactions between a pair of 60°misfit dislocations and an orthogonal 60°misfit dislocation are theoretically explained.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 1992年第7期367-370,共4页 中国物理快报(英文版)

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