Transmission Electron Microscopy Investigations of Misfit Dislocation Interactions in GaAs/InGaAs Superlattices on GaAs (001) Substrates
摘要
The complex configurations and interactions of misfit dislocations in strained GaAs/InGaAs superlattices on GaAs(001)substrates have been studied by transmission electron microscopy under the two-beam or weak beam conditions.The observed interactions between a pair of 60°misfit dislocations and an orthogonal 60°misfit dislocation are theoretically explained.