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Study of Optical Nonlinearity in Hydrogenated Amorphous Silicon Carbide Film

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摘要 Hydrogenated amorphous silicon carbide(a-Sic_(x):H)films were prepared by glow discharge technique with gas mixture of silane(SiH_(4))and methan(CH_(4)).The room-temperature optical bistability was demonstrated in uncoated a-SiC_(x):H films at the excitation wavelength about 532nm.The switch-on intensity of device is about 0.8 MW/cm^(2) and the switching time is in the nanosecond scale.The physical origin of the optical nonlin5arity in these materials is also discussed.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 1993年第3期151-154,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China.
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