摘要
GaN-based light-emitting devices(LEDs)with different electron blocking layers are theoretically studied and compared by using the advanced physical models of a semiconductor device simulation program.It is found that the structure with an AlInN electron blocking layer shows improved light output power,lower current leakage and efficiency droop.Based on numerical simulation and analysis,these improvements of the electrical and optical characteristics are mainly accounted for by efficient electron blocking.It can be concluded that Auger recombination is responsible for the dominant origin of the efficiency droop of a GaN-based LED as current increases.
作者
温晓霞
杨孝东
何苗
李阳
王耿
卢平原
钱卫宁
李云
张伟伟
吴汶波
陈芳胜
丁立贞
WEN Xiao-Xia;YANG Xiao-Dong;HE Miao;LI Yang;WANG Geng;LU Ping-Yuan;QIAN Wei-Ning;LI Yun;ZHANG Wei-Wei;WU Wen-Bo;CHEN Fang-Sheng;DING Li-Zhen(Laboratory of Micro-nano Photonic Functional Materials and Devices of Guangdong Province,Institute of Optoelectronic Materials and Technology,South China Normal University,Guangzhou 510631;The School of Chemistry,The University of St.Andrews,Fife KY169S,U.K.)
基金
Supported by the National Natural Science Foundation of China under Grant No 61078046
the Natural Science Foundation of Guangdong Province under Grant No 10151063101000009
the Scientific and Technological Plan Project of Guangdong Province under Grant No 2010B010600030.
