摘要
Thin Ru_(21)Zr_(64)Si_(15) films deposited on Si substrates by radio frequency reactive magnetron sputtering are studied and evaluated as diffusion barriers for Cu metallization.Cu/Ru_(21)Zr_(64)Si_(15)/Si and Cu/Zr_(67)Si_(33)/Si structure samples are prepared under the same procedures for comparison.The thermal stability,phase formation,surface morphology and atomic depth profile of the Cu/Ru_(21)Zr_(64)Si_(15)/Si and Cu/Zr_(67)Si_(33)/Si structures before and after annealing at different temperatures are investigated.In conjunction with these analyses,the Cu/Ru_(21)Zr_(64)Si_(15)/Si contact system shows high thermal stability at least up to 650℃.The results obtained reveal that the incorporation of Ru atoms into the Zr_(67)Si_(33) barrier layer is shown to be beneficial for improving the thermal stability of the Cu/barrier/Si contact system.
作者
WANG Ying
SONG Zhong-Xiao
ZHANG Mi-Lin
王颖;宋忠孝;张密林(College of Information and Communication Engineering,Harbin Engineering University,Harbin 150001;State-Key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University,Xi'an 710049;Key Laboratory of Superlight Materials and Surface Technology(Ministry of Education),Harbin Engineering University,Harbin 150001)
基金
Supported by the National Natural Science Foundation of China under Grant No 60906048
the Program for New Century Excellent Talents in University under Grant No NCET-10-0052.
