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Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template

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摘要 Roughened surfaces of light-emitting diodes(LEDs)provide substantial improvement in light extraction efficiency.By preparing the self-assemble nanoporous Ni template through rapid annealing of a thin Ni film,followed by a low damage dry etching process,a p-side-up LED with a roughened surface has been fabricated.Compared to a conventional LED with plane surface,the light output of LEDs with nanoporous p-GaN surface increases up to 71%and 36%at applied currents of 1 mA and 20 mA,respectively.Meanwhile,the electrical characteristics are not degraded obviously after surface roughening.
作者 YU Zhi-Guo CHEN Peng YANG Guo-Feng LIU Bin XIE Zi-Li XIU Xiang-Qian WU Zhen-Long XU Feng XU Zhou HUA Xue-Mei HAN Ping SHI YiZHANG Rong ZHENG You-Dou 于治国;陈鹏;杨国锋;刘斌;谢自立;修向前;吴真龙;徐峰;徐州;华雪梅;韩平;施毅张荣;郑有炓(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093;Nanjing University Institute of Optoelectronics at Yangzhou,Yangzhou 225009)
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2012年第9期219-221,共3页 中国物理快报(英文版)
基金 Supported by the National Basic Research Program of China(2011CB301900) the National Natural Science Foundation of China(61176063,60990311,60820106003,60906025,60936004) The Nature Science Foundation of Jiangsu Province(BK2008019,BK2010385,BK2009255,BK2010178) the Research Funds from NJU-Yangzhou Institute of Optoelectronics.
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