摘要
Based on modification of the simplified coherent potential approximation,a model for the band-gap energy of In_(x)Ga_(y)Al_(1−x−y)N is developed.The parameters of the model are obtained by fitting the experimental band-gap energy of their ternary alloys.It is found that the results agree with the experimental values better than those reported by others,and that the band-gap reduction of In_(x)Ga_(y)Al_(1−x−y)N with increasing In or Ga content is mainly due to enhanced intraband coupling within the conduction band,and separately within the valence band.
作者
ZHAO Chuan-Zhen
ZHANG Rong
LIU Bin
LI Ming
XIU Xiang-Qian
XIE Zi-Li
ZHENG You-Dou
赵传阵;张荣;刘斌;李明;修向前;谢自力;郑有炓(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Nanjing National Laboratory of Microstructures,Department of Physics,Nanjing University,Nanjing 210093;School of Electronics and Information Engineering,Tianjin Polytechnics University,Tianjin 300387)
基金
Supported by the National Natural Science Foundation of China under Grant No 60990311.
