A Low Specific on-Resistance SOI Trench MOSFET with a Non-Depleted Embedded p-Island

A novel silicon-on-insulator(SOI)trench metal-oxide-semiconductor field effect transistor(MOSFET)with a reduced specific on-resistance(R_(on,sp))is presented.It features an oxide-filled trench and a non-depleted embedded p-type island(p-SOI).The oxide trench folds the drift region into a U-shape,resulting in a reduction in cell pitch and R_(on,sp).The non-depleted p-island is employed to further reduce R_(on,sp) by increasing the optimized doping concentration of the drift region without deteriorating the breakdown voltage(BV).The simulation results show that the p-SOI decreases the R_(on,sp) to 10.2 mΩ·cm^(2) from 17.4 mΩ·cm^(2) of the conventional SOI MOSFET at the same BV.