Characteristic Optimization of 1.3 μm High-Speed MQW InGaAsP-AIGaInAs Lasers

We investigate 1.3μm multi quantum-well (MQW) lasers with InGaAsP (well) and InGaAIAs (barrier) on InP for high speed application,compared to the typical structures of In GaAsP (well)-InGaAsP (barrier)/InP and InGaAlAs (well)-InGaAlAs (barrier)/InP with the same quaternary in the well and barrier.We calculate the characteristics of band offset and gain of InGaAsP-AlGaInAs quantum wells ( Q Ws).The advances of the new Q W design are mainly rooted in the large ratio between conduction-band and valence-band offsets (△Ec:△Ev =7:1),higher than the typical value of 4:6 in InGaAsP-InGaAsP and 7:3 in InGaAlAs-InGaAlAs for 1.3μm lasers.Due to the 1ow confinement energy of holes,non-uniformity of carrier distribution over multi-InGaAsP-AlGaInAs QWs is significantly reduced.The enhancement of high-speed performance of InGaAsP-AlGaInAs MQW lasers is investigated in terms of turn-on oscillation.