摘要
Deep donor levels in Te-doped GaAs_(1-x)P_(x) for a large range of compositions have been studied by deep level transient spectroscopy(DLTS).Three kinds of deep levels A,B,and C were observed.Only level A appears in all the samples;it is considered that level A is originated from DX centers.No any regularity of presentation for levels B and C was able to find.Their properties are probably more complicated.
基金
Project supported by the National Science Foundation of China.
