摘要
We studied the effect of nitrogen content in a-SiN_(x):H barrier layers to a-Si:H/a-SiN_(x):H mutilayers with different thickness of a-Si:H well layers.It was shown that,except quantum well effect,the ratio of N/Si and interfacial defects of multilayers have influence on the conduction mechanism.The activation energy of mobility ΔE is equal to 0.17±0.03eV which is attributed to the interfacial scattering.
