摘要
A high-energy shift of the band-band recombination has been observed tn photoluminescence spectra of the strained InP layer grown on GaAs substrate.The InP layer is under biaxial compressive strain at temperatures below the growth temperaiure,because the thermal expansion coefficient of InP is smaller than that of GaAs,The strain value determined by the energy shift of the bandedge peak is in good agreement with the calculated thermal strain.A band to carbon acceptor recombination is also identified.
