摘要
Resistive switching characteristics of hafnium oxide are studied for possible nonvolatile memory device applications.The HfOx films with different oxygen contents are deposited by rf magnetron sputtering under different O_(2) flow rates.The films are amorphous,and the stoichiometric of the film is improved by increasing the O_(2) flow rate.Current-voltage characteristics of the TiN/HfOx/ITO device are investigated with 1 mA compliance.The bipolar resistive switching behavior is observed for the TiN/HfOx/ITO structure,and the resistive switching mechanism of the TiN/HfOx/ITO structure is explained by trap-controlled space charge limit current conduction.
基金
Supported by the National Natural Science Foundation of China under Grant No 51202196
the Northwestern Polytechnical University(NPU)Foundation for Fundamental Research(No JC201111)
the Research Fund of the State Key Laboratory of Solidification Processing(NWPU)(No 58-TZ-2011)
the 111 Project(No B08040).
