摘要
The behaviors of constant electric field stressing of the thin(200Å)oxynitride and re-oxidized oxynitride films are investigated.The flat-band shift is not a simple function of the stressing field.The observed phenomena are attributed to the significance of trap filling,electronic tunneling and trap generation at different stressing field strengths.Re-oxidized sample is found to have high resistant to the electron tunneling and trap generation.
基金
Supported in part by the National Natural Science Foundation of China
the Croucher Foundation and the UPGC research grant of Hong Kong。
