Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells

The influence of dry etching damage on the internal quantum efficiency of InGaN/GaN nanorod multiple quantum wells (MQWs) is studied.The samples were etched by inductively coupled plasma (ICP) etching via a selfassembled nickel nanomask,and examined by room-temperature photoluminescence measurement.The key parameters in the etching process are rf power and ICP power.The internal quantum efficiency of nanorod MQWs shows a 5.6 times decrease substantially with the rf power increasing from 3W to 100W.However,it is slightly influenced by the ICP power,which shows 30% variation over a wide ICP power range between 30W and 600W.Under the optimized etching condition,the internal quantum efficiency of nanorod MQWs can be 40% that of the as-grown MQW sample,and the external quantum efficiency of nanorod MQWs can be about 4 times that of the as-grown one.