摘要
The effect of molecular nitrogen exposure on the surfaces of InP(100)modified by potassium overlayers is investigated by core-level and valence-band photoemission spectroscopy using Synchrotron radiation.In comparison with InP(110)surface,we found the promotion is much stronger for InP(100)surface due to the central role of surface defects in the promotion;furthermore,in contrast with K-promoted oxidation of InP(100)where the bonding is observed between indium and oxygen,indium atoms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100).
基金
Supported by the National Natutal Science Foundation of China
by Hefei National Synchrotron Radiation Laboratory.
