基于SOI的光电探测器设计与单片集成技术研究

SOI-Based Photodetector Design and Monolithic Integration Technology

设计了一种基于SOI材料制作的兼顾响应度和带宽的光电探测器,该光电探测器采用标准0.18μm CMOS工艺,与现有工艺完全兼容,同时易于单片集成。利用Silvaco对该光电探测器进行了仿真,并对仿真结果进行分析。分析了光电探测器响应度和带宽的影响因素,通过控制吸收层厚度、离子注入深度等工艺步骤,结合器件特性设计优化深N阱结构,实现了高响应度高带宽的光电探测器。在5 V反向偏置的条件下,基于SOI的光电探测器在850 nm波长下实现了0.33 A/W的响应度,-3 dB带宽为120 MHz。研究结果对高速应用场景下的光电探测器的发展具有重要意义。

A photodetector based on SOI materials that combines responsiveness and bandwidth has been designed,using a standard 0.18μm CMOS process that is fully compatible with existing processes and easy to integrate monolithically.The photodetector is simulated using Silvaco and the results are analysed.The factors affecting the responsiveness and bandwidth of the photodetector are analysed,and a photodetector with high responsiveness and high bandwidth is achieved by controlling the thickness of the absorber layer,the ion injection depth and other process steps,and by designing an optimised deep N-well structure in conjunction with the device characteristics.The SOI-based photodetector achieves a responsivity of 0.33 A/W at 850 nm with a-3 dB bandwidth of 120 MHz under a 5 V reverse bias,and the results are of great significance for the development of photodetectors for high-speed applications.