摘要
The highly photo-sensitive characteristics of porous silicon(PS)were observed.The transient behaviors of photoconductivity in horizontal and perpendicular directions of PS surface were very different,though both of them include two decay components.The photoconduction spectra at room temperature and 14.5K show that characteristics of PS are different from those of silicon substrate.The difference may be attributed to quantum confinement effect in nano-size microstructures of PS.
