Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled- Quantum- Wells
摘要
We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al_(0.35) Ga_(0.65)As/GaAs(50/40/100Å)asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra.The minimum level splitting is about 2.5meV.
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