摘要
We present room temperature femtosecond rejection studies on the photocarrier dynamics of GaAs and GaAs/AlGaAs multiple quantum wells(MQW).A rising wing with a time constant of about.5 ps and an increased amplitude per carrier is observed for the MQW sample at carrier densities lower than 5×10^(11) cm^(-2).This phenomenon is explained as the saturation of the excitonic transitions.
基金
Supported by the Science Foundation of Zhongshan University.
