摘要
The partial disordering of GaAs/AlGaAs quantum well(QW)material has been obtained by rapid thermal annealing with SO2 dielectric capping film.In this case,the absorption edge of QW material was shifted apparently.A laser and a modulator were integrated on a same chip by partial disordering process on the select4d area of QW wafer which was grown by molecular beam epitaxy.
基金
Supported by the National Natural Science Foundation of China,。
