摘要
Gallium nitride crystals in nano-scale have been fabricated by dc arc plasma method using gallium and N_(2)+NH_(3) as starting materials.Transmission electron microscope,selected area diffraction and x-ray diffraction investigation of the as-grown GaN crystals show that the well faceted crystals are single crystalline GaN in wurtzite structure having lattice constants a_(0)=3.18Åand c_(0)=5.18Å.
