摘要
Diamond films were synthesized on Si substrate by electron-assisted chemical vapor deposition method using gas mixtures of methane(or acetone)and hydrogen.Various crystal structures of diamond films were obtained by synthesis with various deposition conditions.The influences of various deposition conditions on thermal conductivity of diamond film were studied.The results show that large-grain(100)-oriented diamond films synthesized at lower concentration of methane and acetone have higher thermal conductivity,and thermal conductivity increases with the increasing in film thickness and the removal of the Sic layer on the back of the film,at last,annealing in ambience of hydrogen is advantageous to acquiring diamond film with high thermal conductivity.
