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Photoluminescence Investigation of Charge Build-Up Process in the Emitter of a Double-Barrier Resonant Tunneling Structure

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摘要 Charge build-up process in the emitter of a double-barrier resonant tunneling structure is studied by using photoluminescence spectroscopy.Clear evidence is obtained that the charge accumulation in the emitter keeps almost constant with bias voltages in the resonant regime,while it increases remarkably with bias voltages beyond resonant regime.The optical results are in good agreement with the electrical measurement.It is demonstrated that the band gap renormalization plays a certain role in the experiment.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 1996年第9期707-710,共4页 中国物理快报(英文版)
基金 Supported by the State Science and Technology Commission,and the National Natural Science Foundation of China.
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