摘要
The perovskite-like SrBi_(2)Ta_(2)O_(9)(SBT)thin films have been fabricated on Si/SiO_(2)/Ti/Pt substrate by pulse laser deposition.The crystallization and ferroelectric property were clearly dependent on the annealing time and temperature.The SBT thin film with fine grain size and well-saturated square hysteresis loop was obtained after annealing at 750℃ for 90min.Good ferroelectric properties were obtained from the SBT film annealed under this condition;Pr and Ec were 8.4μC/cm^(2) and 57kV/cm,respectively.
