摘要
Based on the large cross-section single-mode rib waveguide condition,the total internal reflection and the free-carrier plasma dispersion effect,a silicon-on-insulator(SOI)2×2 symmetric optical waveguide switch with a transverse injection structure has been proposed and fabricated,in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing.The device performance is measured at the wavelength of 1.3μm.It shows that the crosstalk and insertion loss are less than -18.1 and 4.8 dB,respectively,at an injection current of 60mA,and response time is 110 ns.
作者
ZHAO Ce-zhou
LIU En-ke
LI Guo-zheng
LIU Yu-liang
GUO Lin
赵策洲;刘恩科;李国正;刘育梁;郭林(Microelectronics Institute,Xidian University,Xi'an 710071;Department of Electronic Engineering,Xi'an Jiaotong University,Xi'an 710049;Sichuan Institute of Solid-state Circuits,Chongqing 630060)
基金
Supported by the High Technology Research and Development Programme of China.