摘要
Si-rich SiO_(2) films were deposited by plasma-enhanced chemical vapor deposition on the silicon substrates,and then implanted with 1×10^(15)cm^(-2) 400 keV Er ions.After annealing at 800℃ for 5 min,the samples show room temperature luminescence around 1.54μm,characteristic of intra-4f emission from Er^(3+),upon excitation using an Ar ion laser.
作者
雷红兵
杨沁清
朱家廉
高俊华
王红杰
王启明
LEI Hong-bing;YANG Qin-qing;ZHU Jia-lian;GAO Jun-hua;WANG Hong-jie;WANG Qi-ming(State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)
